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On the Growth, Structure, and Optical Reflection of Magnesium Silicide Films Grown on Porous Silicon under High-Vacuum Conditions

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Abstract

The growth of magnesium silicide on porous silicon under high vacuum conditions (10–5–10‒6 Torr) without the chemical removal of silicon oxide and in a limited temperature range of preliminary annealing (Ta = 450°C) is tested for the first time. It is found that the minimum substrate temperature at which deposited magnesium begins to destroy silicon oxide and interact with silicon by forming magnesium silicide (Mg2Si) is 290°C. In the solid phase reaction of magnesium with porous silicon, the optimum temperature at which, after the destruction of silicon oxide, the formation of a continuous Mg2Si film begins is 350°C. It is shown that, at an annealing temperature Ta = 420°C, only a Mg2Si island film of good crystalline quality is formed. The formation of magnesium silicide in all cases is confirmed by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, or Raman micromapping. It is established that the reflection spectrum of the Mg2Si/PS/Si system corresponds to the reflection from porous silicon with a partial increase at 500–900 nm due to the contribution to reflection from magnesium silicide, which increases with increasing film thickness. It is proved that after the heat treatment of porous silicon and the growth of magnesium silicide with a thickness of up to 90 nm, PS photoluminescence is retained, the radiation of which is recorded with partial attenuation in the Mg2Si film without changing the spectral composition, both immediately after growth and after long-term storage under atmospheric conditions (up to 8 months).

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ACKNOWLEDGMENTS

We thank Ph.D. A.A. Kuchmizhak for conducting SEM  film morphology surveys and Ph.D. A.V.  Gera-simenko (Institute of Chemistry, Far Eastern Branch, Russian Academy of Sciences) for recording the X-ray spectra of the samples. We are grateful to the administration of the Institute of Chemistry, Far Eastern Branch, Russian Academy of Sciences, for providing the opportunity to conduct X-ray phase studies on the experimental equipment of the center for collective usage.

Funding

The work was carried out with financial support from the state budget on the subject of Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences in 2021 (no. 0202-2021-0002).

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Authors and Affiliations

  1. Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, 690041, Vladivostok, Russia

    Nikolay G. Galkin, Aleksandr V. Shevlyagin, Vladimir M. Il’yashchenko & Konstantin N. Galkin

  2. Far Eastern State Transport University, 680021, Khabarovsk, Russia

    Dmitriy T. Yan

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  1. Nikolay G. Galkin
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Galkin, N.G., Shevlyagin, A.V., Il’yashchenko, V.M. et al. On the Growth, Structure, and Optical Reflection of Magnesium Silicide Films Grown on Porous Silicon under High-Vacuum Conditions. Semiconductors (2023). https://doi.org/10.1134/S106378262370001X

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