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Impurity Doping in Semiconductor Nanowires

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Fundamental Properties of Semiconductor Nanowires

Abstract

Due to their novel physical properties, semiconductor nanowires are of great research interest. To realize novel devices that feature them, however, they need to be modified. One of the most well-known, important and effective functionalization techniques is impurity doping: this will be the key to the application of nanowires to metal oxide field-effect transistors, solar cells, sensors, and similar devices. To control doping and obtain superior properties, it is important to fine-tune the impurity doping process to a high level of precision. In this chapter, several doping methods such as ex situ, in situ, and surface doping are described. Each method has its own advantages and disadvantages for impurity doping of nanowire structures. The characterization of dopant atoms is also important to understand the status and behaviors of dopant atoms in nanowire structures and to control their properties.

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  1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan

    Naoki Fukata

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  1. National Institute for Materials Science, Tsukuba, Ibaraki, Japan

    Naoki Fukata

  2. CSIC, Institut de Ciència de Materials de Barc CSIC, Bellaterra, Spain

    Riccardo Rurali

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Fukata, N. (2021). Impurity Doping in Semiconductor Nanowires. In: Fukata, N., Rurali, R. (eds) Fundamental Properties of Semiconductor Nanowires. Springer, Singapore. https://doi.org/10.1007/978-981-15-9050-4_3

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