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Specifications ; Emitter- Base Voltage VEBO: 5 V ; Collector-Emitter Saturation Voltage: 500 mV ; Maximum DC Collector Current: 2 A ; Pd - Power Dissipation: 1.35 W.
Features and benefits · High collector current capability IC and I · Three current gain selections · High power dissipation capability · Qualified according to ...
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Order today, ships today. BCP56-16-QX – Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 650 mW Surface Mount SOT-223 from Nexperia USA Inc..
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Specifications ; Manufacturer: Nexperia ; Product Category: Bipolar Transistors - BJT ; RoHS: Details ; Mounting Style: SMD/SMT.
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BCP56-16-QX ; Collector-Emitter Saturation Voltage, 500 mV ; Maximum DC Collector Current, 2 A ; Pd - Power Dissipation, 1.35 W ; Gain Bandwidth Product fT, 180 MHz.
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Buy Nexperia BCP56-16-QX in Reel. Transistor GP BJT NPN 80V 1A 4-Pin SOT-223 T/R - from Future Electronics.
BCP56-Q series auto medium power - 80 V, 1 A NPN medium power transistors.
BCP56-16T-QX in Reel by Nexperia | Bipolar (BJT) Transistors
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Nexperia | BCP56-16T-QX ; Mfr. Name: Nexperia ; Standard Pkg: Product Variant Information section. Available Packaging. Package Qty: 1000 per Reel. Package Style:.
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BCP56-16-QF · Nexperia. Bipolar Transistors - BJT BCP56-16-Q/SOT223/SC-73. Specifications. SC-73-4. Surface Mount. SOT-223. SMD/SMT. Details. NPN. - 55 C.