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Specifications ; Emitter- Base Voltage VEBO: 7 V ; Collector-Emitter Saturation Voltage: 600 mV ; Pd - Power Dissipation: 250 W ; Series: BUV298.
Symbol. Parameter. Value. Unit. VCEV. Collector-Emitter Voltage (VBE = -5 V). 1000. V. VCEO(sus). Collector-Emitter Voltage (IB = 0).
BUV298V. BUV298V. ISOTOP. Tube. BUV298V. NPN transistor power module. General features. □ NPN Transistor. □ High current power bipolar module. □ Very low Rth ...
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BUV298V is a high voltage, high speed, N-channel enhancement mode power MOSFET. It is designed for use in switching applications such as DC-DC converters, ...
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BUV298 STMicroelectronics Transistors parts available at DigiKey.