$0.39
SI2308DS-T1-E3 ; FET Type. N-Channel ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 60 V ; Current - Continuous Drain (Id) @ 25°C · 2A (Ta).
SI2308DS-T1-E3 Vishay / Siliconix MOSFET RECOMMENDED ALT SI2308BDS-T1-GE3 datasheet, inventory, & pricing.
Feb 2, 2009 · Si2308DS-T1-E3 (Lead (Pb)-free). Si2308DS-T1-GE3 (Lead (Pb)-free and ... Zero Gate Voltage Drain Current. IDSS. VDS = 60 V, VGS = 0 V. 0.5.
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FET Type, MOSFET N-Channel Metal Oxide ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 60V ; Current - Continuous Drain (Id) @ 25 C · - ; Rds On ( ...
Power MOSFET, N Channel, 60 V, 2 A, 0.125 ohm, SOT-23, Surface Mount ; Price for: 1 Each (Supplied on Cut Tape) ; Minimum order quantity: 3000 ; Order multiple ...
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:2A; Resistance, Rds On:0.16ohm; Voltage, ...
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(11) · In stock
The SI2308DS-T1-GE3 is a 60V 3.1A 1.66W 85mO@10V, 1.9A n-channel MOSFET manufactured by VBsemi Elec, a leading semiconductor manufacturer. This SOT-23-3 MOSFET ...
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· $5,000.00
SI2308DS-T1-E3 General Description. The SI2308DS-T1-E3 is a MOSFET transistor with a voltage rating of 60V and a continuous current rating of 2A.
SI2308DS-T1-GE3. 1. Page 2. Notes: a. Pulse test; pulse width ≤ 300 µs ... Zero Gate Voltage Drain Current. IDSS. VDS = 60 V, VGS = 0 V. 1. µA. VDS = 60 V ...
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· In stock
SI2308DS-T1-E3 ; Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V ; Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V ; FET Type: N-Channel ; FET Feature: - ; Drain to ...