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IGBT stands for insulated-gate bipolar transistor. It is a bipolar transistor with an insulated gate terminal. The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch.
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Биполярный транзистор с изолированным затвором

Биполя́рный транзи́стор с изоли́рованным затво́ром — трёхэлектродный силовой полупроводниковый прибор, сочетающий два транзистора в одной полупроводниковой структуре: биполярный и полевой. Википедия
"IGBT", источник: en.wikipedia.org
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch.
"IGBT", источник: www.electronics-tutorials.ws
The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, ...
"IGBT", источник: www.infineon.com
IGBTs combine the high current-carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power control of a ...
"IGBT", источник: toshiba.semicon-storage.com
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor.
"IGBT", источник: www.rohm.com
IGBT : What is IGBT? IGBT is an acronym for Insulated Gate Bipolar Transistor, and can achieve low saturation voltage with relatively fast switching ...
"IGBT", источник: www.onsemi.com
onsemi supplies insulated gate bipolar transistors (IGBTs) for electronic ignition, flash, motor drive, and other high current switching applications.
"IGBT", источник: www.st.com
ST offers a comprehensive portfolio of insulated gate bipolar transistors (IGBTs) ranging from 300 to 1700 V, belonging to the STPOWER family.
The Insulated-Gate Bipolar Transistor (IGBT) is a semiconductor device with three terminals that combines the characteristics of both Bipolar Junction ...
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Опубликовано: 17 сент. 2023 г.